The laboratory is structured around the growth of materials by epitaxy, which is at the heart of its activities. These materials are grouped today around the theme of high bandgap semiconductors: gallium nitrides (GaN, InN, AlN and alloys), zinc oxide (ZnO) and silicon carbide (SiC). Graphene, a zero bandgap material, epitaxially grown on SiC, completes this list. Different growth methods are used to synthesize these materials: molecular beam epitaxy (under ultrahigh vacuum) and various vapor phase epitaxies. Structural, optical and electrical analysis activities have been organized around this expertise in epitaxy. The regional technology platform (CRHEATEC) makes it possible to manufacture devices. In terms of applications, the laboratory covers both the field of electronics (High Electron Mobility Transistors, Schottky diodes, tunnel diodes, spintronics, etc.) and that of optoelectronics (light-emitting diodes, lasers, detectors, materials for nonlinear optics, microcavity structures for optical sources, etc.). The laboratory has also embarked on the "nano" path, including both fundamental aspects (nanoscience) and more applied aspects (nanotechnology for electronics or optics).